Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs

Author

Wirth, Gilson I. ; Koh, Jeongwook ; Silva, Roberto Da ; Thewes, Roland ; Brederlow, Ralf

Author_Institution

Univ. Fed. do Rio Grande do Sul, Porto Alegre, Brazil

Volume

52

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

1576

Lastpage

1588

Abstract

The low-frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics parameters which cause statistical variations in LF-noise behavior of individual devices. Discrete quantities are used and analytical results for the statistical parameters are derived. Analytical equations for average value and standard deviation of noise power are provided. The model is compatible with standard compact models used for circuit simulation.

Keywords

MOSFET; circuit simulation; semiconductor device models; semiconductor device noise; statistical analysis; MOS transistors; RF circuits; analog circuits; circuit simulation; deep-submicrometer MOSFETs; device physics parameters; noise modeling; noise power; semiconductor device noise; statistical low-frequency noise; yield relevant parameter scattering; CMOS analog integrated circuits; CMOS process; CMOS technology; Circuit noise; Low-frequency noise; MOSFETs; Radio frequency; Semiconductor device modeling; Semiconductor device noise; Voltage; Analog circuits; MOS transistors; RF circuits; low-frequency noise (LF-noise); noise modeling; semiconductor device noise;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.850955

Filename

1459122