• DocumentCode
    988854
  • Title

    Comment: Analysis of radiative and nonradiative recombination law in lightly doped InGaAsP lasers

  • Author

    Olshansky, R. ; Su, C.B. ; Manning, John ; Schlafer, J.

  • Author_Institution
    GTE Laboratories Incorporated, Waltham, USA
  • Volume
    19
  • Issue
    21
  • fYear
    1983
  • Firstpage
    867
  • Lastpage
    868
  • Keywords
    III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; semiconductor junction lasers; III-V semiconductors; lifetime data; lightly doped InGaAsP lasers; nonradiative recombination law; radiative recombination law; semiconductor junction lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830589
  • Filename
    4248117
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=988854