DocumentCode
988858
Title
Linear tunable COMFET transconductor
Author
Huang, Shih-Chia ; Ismail, Mahamod
Author_Institution
Ohio State Univ., Columbus, OH, USA
Volume
29
Issue
5
fYear
1993
fDate
3/4/1993 12:00:00 AM
Firstpage
459
Lastpage
461
Abstract
A linear tunable transconductor is designed with the use of linear COMposite n-channel MOSFETs (COMFETs) and CMOS COMposite FETs as basic cells. With crosscoupling, a differential linear relation is achieved with a THD at 1 kHz of 0.776% for a differential voltage of +or-4 V. The design of the transconductor demonstrates that COMFET devices can be successfully used as standard cells in modulator analogue VLSI circuits. The transconductor performance at subthreshold is also discussed.
Keywords
CMOS integrated circuits; VLSI; analogue processing circuits; linear integrated circuits; tuning; CMOS composite MOSFET; COMFET; crosscoupling; linear tunable transconductor; modulator analogue VLSI circuits; n-channel; standard cells; subthreshold;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930307
Filename
250267
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