• DocumentCode
    989671
  • Title

    Room-temperature self-organised In0.5Ga0.5As quantum dot laser on silicon

  • Author

    Mi, Z. ; Bhattacharya, P. ; Yang, J. ; Pipe, K.P.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • Volume
    41
  • Issue
    13
  • fYear
    2005
  • fDate
    6/23/2005 12:00:00 AM
  • Firstpage
    742
  • Lastpage
    744
  • Abstract
    The first room-temperature operation of In0.5Ga0.5As quantum dot lasers grown directly on Si substrates with a thin (≤2 μm) GaAs buffer layer is reported. The devices are characterised by Jth∼1500 A/cm2, output power >50 mW, and large T0 (244 K) and constant output slope efficiency (≥0.3 W/A) in the temperature range 5-95°C.
  • Keywords
    III-V semiconductors; buffer layers; gallium arsenide; indium compounds; quantum dot lasers; silicon; 5 to 95 C; In0.5Ga0.5As-GaAs-Si; buffer layer; room-temperature operation; self-organised quantum dot laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20051558
  • Filename
    1459876
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989671