DocumentCode
989731
Title
DBR laser array for WDM system
Author
Katoh, Y. ; Kunii, T. ; Matsui, Yusuke ; Wada, Hiroyuki ; Kamijoh, T. ; Kawai, Yusuke
Author_Institution
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Volume
29
Issue
25
fYear
1993
Firstpage
2195
Lastpage
2197
Abstract
A four-channel DBR laser array with different lasing wavelengths has been developed for a light source in WDM systems by using a simple selective MOCVD growth technique. Four different lasing wavelengths with a 5nm spacing were achieved by varying the waveguide thickness. The fabrication techniques and lasing characteristics of the device are demonstrated.
Keywords
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical workshop techniques; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; wavelength division multiplexing; 11 to 17 mA; InGaAsP-InP; InP; WDM system; fabrication techniques; four-channel DBR laser array; lasing characteristics; lasing wavelengths; light source; selective MOCVD growth technique; waveguide thickness variation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931475
Filename
250350
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