DocumentCode
990323
Title
New technique for semiconductor device modelling
Author
Goswami, P.K. ; Sitch, J.E.
Author_Institution
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Volume
19
Issue
25
fYear
1983
Firstpage
1087
Lastpage
1088
Abstract
A transient model has been developed for use with microwave semiconductor devices. Charge transport is by particles moving under the influence of the electric field in a self consistent time-stepping procedure. The motion of each particle is governed by its momentum and energy using the relaxation time approximation.
Keywords
semiconductor device models; solid-state microwave devices; charge transport; energy transport; microwave devices; momentum transport; relaxation time approximation; self consistent time-stepping procedure; semiconductor device modelling; transient model;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830737
Filename
4248299
Link To Document