• DocumentCode
    990710
  • Title

    Longitudinal static-field model for DH lasers

  • Author

    Baets, Roel ; Lagasse, P.E.

  • Author_Institution
    University of Gent, Laboratory for Electromagnetism & Acoustics, Gent, Belgium
  • Volume
    20
  • Issue
    1
  • fYear
    1984
  • Firstpage
    41
  • Lastpage
    42
  • Abstract
    A new static model for double-heterostructure lasers is presented which can take into account longitudinal effects in the cavity. The model makes use of the beam-propagation method to calculate the field propagation through the lasing waveguide structure.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser theory; semiconductor device models; semiconductor junction lasers; GaAs-GaAlAs DH laser; III-V semiconductors; beam-propagation method; cavity; double-heterostructure lasers; field propagation; laser theory; lasing waveguide structure; longitudinal effects; semiconductor junction lasers; static-field model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840029
  • Filename
    4248584