Statistical Model for the Circuit Bandwidth Dependence of Low-Frequency Noise in Deep-Submicrometer MOSFETs

Author

Wirth, Gilson I. ; Da Silva, Roberto ; Brederlow, Ralf

Author_Institution

Dept. of Comput. Eng., State Univ. of Rio Grande do Sul, Guaiba

Volume

54

Issue

2

fYear

2007

Firstpage

340

Lastpage

345

Abstract

This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, which cause statistical variation in the LF noise behavior of individual devices. Analytical equations for the statistical parameters are provided. The analytical model is compared to experimental data and Monte Carlo simulation results

Keywords

MOSFET; Monte Carlo methods; semiconductor device models; semiconductor device noise; Monte Carlo simulation; bandwidth dependence; deep-submicrometer MOSFET; frequency dependence; low-frequency noise behavior; microscopic device physics parameters; statistical model; Analytical models; Bandwidth; Circuit noise; Equations; Frequency measurement; Low-frequency noise; MOSFETs; Microscopy; Noise measurement; Physics; Analog circuits; MOS transistors; RF circuits; low-frequency (LF) noise; noise modeling; variability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.888672

Filename

4067202