Insulated Gate P-I-N Transistor-a new MOS controlled switching power device

Author

Huang, Alex Q.

Author_Institution

Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

Volume

16

Issue

9

fYear

1995

Firstpage

408

Lastpage

410

Abstract

In this paper, a new monolithic MOS controlled power transistor structure called the Insulated Gate P-I-N Transistor (IGPT) is described for the first time and its operation is verified by two-dimensional numerical simulation. IGPT achieves an on-state voltage drop similar to that of a PIN diode, yet also provides insulated gate turn-off capability up to several thousand amperes per centimeter square. The turn-off of the IGPT is achieved by the MOS depletion of a high level injection region, verified also for the first time. IGPT is therefore a very attractive device to be used in high power switching applications because it is superior to current generation power devices such as the Insulated Gate Bipolar Transistor (IGBT) and MOS Controlled Thyristor (MCT).<>

Keywords

MIS devices; insulated gate bipolar transistors; power semiconductor switches; power transistors; IGPT; high level injection; insulated gate P-I-N transistor; monolithic MOS controlled switching power device; on-state voltage drop; turn-off; two-dimensional numerical simulation; Cathodes; Electrons; Insulated gate bipolar transistors; Insulation; MOSFETs; Numerical simulation; PIN photodiodes; Power transistors; Thyristors; Voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.406804

Filename

406804