DocumentCode
992361
Title
Mobility in n-(Al, Ga)As/GaAs heterojunctions at moderate electric fields
Author
Chattopadhyay, Deb
Author_Institution
Max-Planck-Institut fÿr Festkörperforschung, Stuttgart, West Germany
Volume
20
Issue
11
fYear
1984
Firstpage
466
Lastpage
468
Abstract
Hot-electron mobilities in (Al, Ga)As/GaAs single hetero-structures at 77 and 300 K are calculated for fields below 500 V/cm. Polar optic and acoustic deformation potential phonon scattering are considered, and intra- and inter-sub-band transitions in the first two sub-bands are included. The strong electron-electron interaction is assumed to enforce a displaced Maxwellian distribution function. The calculated results mostly explain the recently observed field variation of mobility.
Keywords
III-V semiconductors; aluminium compounds; carrier mobility; electron-phonon interactions; gallium arsenide; hot carriers; p-n heterojunctions; 300K; 77K; AlxGa1-xAs; III-V semiconductors; acoustic deformation potential phonon scattering; displaced Maxwellian distribution function; electron-phonon interactions; heterojunctions; hot electron mobilities; intersubband transitions; intrasubband transitions; moderate electric fields; n-(Al, Ga)As/GaAs; polar optic scattering; strong electron-electron interaction;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840326
Filename
4248786
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