• DocumentCode
    992453
  • Title

    High-performance GaAs-GaAlAs phase modulators for PSK optical fibre systems

  • Author

    Houghton, A.J.N. ; Rodgers, P.M. ; Andrews, David A.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    20
  • Issue
    11
  • fYear
    1984
  • Firstpage
    479
  • Lastpage
    481
  • Abstract
    GaAs-GaAlAs monomode phase modulators have been made from MBE-grown heterostructures using reproducible fabrication techniques. A ¿ phase shift at 9 V was obtained for a device length of 4.2 mm. With an internal optical loss <2.5 dB and modulation capability to >1.2 Gbit s¿1, these devices show superior overall performance to any previously reported semiconductor guided-wave devices.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; molecular beam epitaxial growth; optical modulation; optical waveguide components; phase shift keying; GaAs-GaAlAs; III-V semiconductors; MBE-grown heterostructures; PSK optical fibre systems; fabrication techniques; integrated optics; monomode phase modulators; optical communication equipment; optical waveguide components;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840335
  • Filename
    4248796
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=992453