Non-classical polysilicon thin-film transistor with symmetric trenched body

The polysilicon thin-film transistor with symmetric trenched body that manifests off-state leakage suppression without sacrificing on-state current and other electric performance is investigated. Depending on the carrier scattering effect through the polysilicon grain-boundary traps, the leakage path can be changed from the trenched body. This proposed symmetric trenched thin-film transistor can be easily carried out by trenching and backfilling the buried oxide without destroying channel film quality, and off-state leakage is calculated to be on average 50% smaller than that of the conventional thin-film transistor.