• DocumentCode
    992708
  • Title

    Lateral resurfed COMFET

  • Author

    Darwish, M. ; Board, K.

  • Author_Institution
    University College of Swansea, Department of Electrical & Electronic Engineering, Swansea, UK
  • Volume
    20
  • Issue
    12
  • fYear
    1984
  • Firstpage
    519
  • Lastpage
    520
  • Abstract
    A lateral resurfed COMFET structure is proposed. The conductivity of the drift region of the device is modulated as in the case of vertical COMFET. However, the maximum operating current and switching speed are expected to be several times that of the vertical structure because of the collection of excess minority carriers by the p¿-substrate and the narrow width of the n¿ epitaxial layer.
  • Keywords
    insulated gate field effect transistors; power transistors; IGFET; excess minority carriers; higher latching current; lateral resurfed COMFET structure; lower turnoff time; maximum operating current; n- epitaxial layer; p--substrate; power transistors; switching speed;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840360
  • Filename
    4248826
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=992708