Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing

Author

Han, Sang-Myeon ; Lee, Min-Cheol ; Shin, Moon-Young ; Park, Joong-Hyun ; Han, Min-Koo

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea

Volume

93

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

1297

Lastpage

1305

Abstract

We fabricated poly-Si thin-film transistors at 150°C using inductively coupled plasma (ICP) chemical vapor deposition (CVD) and excimer laser annealing (ELA). An Si film deposited by ICP-CVD was recrystallized using ELA, and a poly-Si film with large grains exceeding 5000 Å in diameter was fabricated. An SiO₂ film with a high breakdown field was deposited by ICP-CVD. A high mobility exceeding 100 cm²/Vs and a low subthreshold swing of 0.76 V/dec were successfully achieved.

Keywords

elemental semiconductors; excimer lasers; laser beam annealing; plasma CVD coatings; semiconductor device manufacture; silicon; thin film transistors; 150 C; ICP-CVD; SiO₂; breakdown field; chemical vapor deposition; excimer laser annealing; grain; inductively coupled plasma; mobility; poly-Si TFT; thin film transistors; Annealing; Atherosclerosis; Chemical lasers; Chemical vapor deposition; Plasma chemistry; Plasma temperature; Plastics; Semiconductor films; Substrates; Thin film transistors; 150; excimer laser annealing (ELA); inductively coupled plasma (ICP); poly-Si; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/JPROC.2005.851535

Filename

1461586