• DocumentCode
    993266
  • Title

    Monolithically integrated Gunn oscillator at 35 GHz

  • Author

    Wang, N. ; Schwarz, S.E. ; Hierl, T.

  • Author_Institution
    University of California, Electrical Engineering Department & Electronics Research Laboratory, Berkeley, USA
  • Volume
    20
  • Issue
    14
  • fYear
    1984
  • Firstpage
    603
  • Lastpage
    604
  • Abstract
    A fully planar monolithically integrated Gunn oscillator for 35 GHz has been constructed on a GaAs substrate. An output power of about 1.5 mW, corresponding to an efficiency of 0.5%, is obtained from the oscillator in its present unoptimised form. The device is intended for use as a local oscillator in integrated millimetre-wave receivers. Measurements are made by means of quasi-optical output coupling.
  • Keywords
    Gunn oscillators; III-V semiconductors; gallium arsenide; integrated circuit technology; microwave integrated circuits; monolithic integrated circuits; EHF; GaAs substrate; Ka-band; MMIC; efficiency; frequency 35 GHz; integrated millimetre-wave receivers; local oscillator; mm-waves; output power; planar monolithically integrated Gunn oscillator; quasioptical coupling;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840416
  • Filename
    4248895
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=993266