• DocumentCode
    993583
  • Title

    High-temperature aging tests on planar structure InGaAs/InP PIN photodiodes with Ti/Pt and Ti/Au contact

  • Author

    Ishihara, H. ; Makita, Kikuo ; Sugimoto, Yoshiki ; Torikai, T. ; Taguchi, Katsuhisa

  • Author_Institution
    NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
  • Volume
    20
  • Issue
    16
  • fYear
    1984
  • Firstpage
    654
  • Lastpage
    656
  • Abstract
    Planar structure InGaAs/InP PIN photodiodes having low dark current and low junction capacitance characteristics were reproducibly fabricated by using VPE wafers. Bias/temperature life testings for the diodes showed that there were no significant degradations after 5500 h aging at 250°C and 10 V reverse bias by adopting the Ti/Pt and Ti/Au metals for the p-side contact.
  • Keywords
    III-V semiconductors; ageing; gallium arsenide; indium compounds; life testing; photodiodes; vapour phase epitaxial growth; III-V semiconductors; InGaAs/InP PIN photodiodes; Ti/Au contact; Ti/Pt contact; VPE; aging; dark current; junction capacitance characteristics; life testings; p-side contact; planar structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840448
  • Filename
    4248937
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=993583