• DocumentCode
    993779
  • Title

    Electron-beam-induced damage study in GaAs-AlGaAs heterostructures as determined by magnetotransport characterization

  • Author

    Fink, Tobin ; Smith, Doran D. ; Braddock, W. David

  • Author_Institution
    US Army Electron. Technol. & Device Lab., Ft. Monmouth, NJ, USA
  • Volume
    37
  • Issue
    6
  • fYear
    1990
  • fDate
    6/1/1990 12:00:00 AM
  • Firstpage
    1422
  • Lastpage
    1425
  • Abstract
    The effect of electron energy on the two-dimensional electron gas (2D EG) transport properties of high-electron-mobility transistor (HEMT) structures at low temperatures is measured. The structures were grown by molecular beam epitaxy (MBE) with a 2D EG approximately 850 Å below the surface. The HEMTs were fabricated into Hall bars, and damage was assessed by changes in the 2D EG concentrations as determined from Schubnikov-de Haas oscillations and changes in the mobility as determined from the zero magnetic-field resistivity. For electron energies from 5.0 to 12.5 keV, the electron dose produced a degradation of the Hall mobility. No damage was observed for electron energies outside this range; this result is attributed to the penetration depth and damage distribution
  • Keywords
    Hall effect; III-V semiconductors; aluminium compounds; electron beam effects; gallium arsenide; high electron mobility transistors; molecular beam epitaxial growth; semiconductor junctions; 2DEG; GaAs-AlGaAs; HEMT; Hall bars; MBE; Schubnikov-de Haas oscillations; damage distribution; electron beam induced damage; electron energy; electron mobility changes; high-electron-mobility transistor; low temperatures; magnetotransport characterization; molecular beam epitaxy; penetration depth; semiconductors; two-dimensional electron gas; zero magnetic-field resistivity; Bars; Conductivity; Degradation; Electron mobility; Energy measurement; HEMTs; Hall effect; MODFETs; Molecular beam epitaxial growth; Temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.106235
  • Filename
    106235