• DocumentCode
    993875
  • Title

    Transverse junction stripe lasers using Si-doped GaAs/AlGaAs grown by MBE

  • Author

    Mitsunaga, K. ; Fujiwara, Koji ; Nunoshita, M. ; Nakayama, Taiki

  • Author_Institution
    Mitsubishi Electric Corporation, Central Research Laboratory, Amagasaki, Japan
  • Volume
    20
  • Issue
    17
  • fYear
    1984
  • Firstpage
    694
  • Lastpage
    695
  • Abstract
    Transverse junction stripe (TJS) laser diodes on a semi-insulating substrate have been fabricated using Si-doped GaAs/AlGaAs double-heterostructure layers grown by MBE. Room-temperature CW operation of the TJS laser with a low threshold current (30 mA) has been achieved.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; silicon; CW operation; DH lasers; III-V semiconductors; MBE; Si-doped GaAs/AlGaAs; TJS laser; double-heterostructure layers; integrated optics; laser diodes; semiconductor lasers; semiinsulating substrate; threshold current; transverse junction stripe lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840476
  • Filename
    4248974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=993875