• DocumentCode
    994109
  • Title

    1.3 μm InGaAsP DCPBH multiquantum-well lasers

  • Author

    Dutta, N.K. ; Napholtz, S.G. ; Yen, R. ; Brown, Robert L. ; Shen, T.M. ; Olsson, N.A. ; Craft, D.C.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    20
  • Issue
    18
  • fYear
    1984
  • Firstpage
    727
  • Lastpage
    728
  • Abstract
    We report the fabrication and performance characteristics of InGaAsP double-channel planar buried heterostructure (DCPBH) lasers with multiquantum-well active layers emitting at 1.3 μm. These lasers have threshold currents in the range 40-50 mA at 30°C, external differential quantum efficiencies of ˜50% at 30°C and T0 values ˜160 to 180 K in the temperature range 10-60°C.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; 30°C; 40 to 50 mA threshold currents; DCPBH; III-V semiconductors; InGaAsP; LPE growth; MQW; double-channel planar buried heterostructure; fabrication; multiquantum-well lasers; optical communication equipment; performance characteristics; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840498
  • Filename
    4249002
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=994109