DocumentCode
994524
Title
Crescent InGaAsP mesa substrate buried-heterostructure lasers at 1.55 μm
Author
Feldman, R.D. ; Austin, R.F. ; Oron, M.
Author_Institution
AT&T Bell Laboratories, Holmdel, USA
Volume
20
Issue
19
fYear
1984
Firstpage
795
Lastpage
796
Abstract
Lasers with an inverted buried-crescent active layer have been grown over mesa substrates in a single liquid-phase-epitaxial growth step. Threshold currents are 50-70 mA. High output power, with linear light/current characteristics up to 18 mW, is seen. The temperature dependence is characterised by T0 = 70°C, which is higher than normally seen in 1.55 μm lasers.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; linear programming; optical communication equipment; semiconductor junction lasers; BH lasers; III-V semiconductors; InGaAsP mesa substrate buried-heterostructure lasers; inverted buried-crescent active layer; linear light/current characteristics; mesa substrates; optical communication lasers; output power; semiconductor lasers; single liquid-phase-epitaxial growth step; temperature dependence; threshold current; wavelength 1.55 micron;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840541
Filename
4249050
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