Modified single-phase LPE technique for In1-xGaxAs1-yPy laser structures

Author

Nordland, W.A. ; Kazarinov, R.F. ; Merritt, F.R. ; Savage, A. ; Bonner, W.A.

Author_Institution

AT&T Bell Laboratories, Murray Hill, USA

Volume

20

Issue

20

fYear

1984

Firstpage

806

Lastpage

808

Abstract

A modified single-phase technique for growth of epitaxial layers of the quaternary compound, In1-xGaxAs1-yPy has been used to fabricate high-quality laser structures in the 1.3 and 1.55 μm-wavelength range. This method permits the concentration of small amounts of phosphorus in the InGa:As melt to be maintained accurately and independent of the history of the graphite boat. Growth of planar structures having small variations in wavelength and uniformity in layer thickness of the order of hundreds of Ã¥ngstrÃ¶ms was easily repeatable. Laser structures, in addition, had low values for threshold current density and gave high yields for both the 1.3 and 1.55 μm wavelength ranges.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; 1.3 microns; 1.55 microns; III-V semiconductor; In1-xGaxAs1-yPy laser structures; P concentration; epitaxial layers; graphite boat; high yields; planar structures; semiconductor growth; single-phase LPE; threshold current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19840548

Filename

4249058