GaAs MESFET physical models for process-oriented design

Author

Snowden, Christopher M. ; Pantoja, Renato R.

Author_Institution

Dept. of Electron. & Electr. Eng., Leeds Univ., UK

Volume

40

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1401

Lastpage

1409

Abstract

A detailed physical model which is used to accurately predict the DC and microwave performance of GaAs MESFETs is described. This model, which accounts for hot electron effects in submicron FETs, includes trapping phenomena and heating due to power dissipation. It is used to determine the optimal design for small-signal and power devices, including single- and double-recessed FETs. The spread in device characteristics can be directly related to the variation in device geometry and process parameters experienced in fabrication. The accuracy and flexibility of this approach are demonstrated by comparison with measured data for a variety of devices

Keywords

III-V semiconductors; Schottky gate field effect transistors; electron traps; gallium arsenide; hole traps; hot carriers; semiconductor device models; solid-state microwave devices; DC performance; GaAs; MESFET; charge control model; device characteristics; device geometry; double-recessed FETs; heating; hot electron effects; microwave performance; physical models; power devices; power dissipation; process parameters; process-oriented design; single-recessed FETs; submicron FETs; trapping phenomena; Electromagnetic heating; Electron traps; FETs; Gallium arsenide; Geometry; MESFETs; Microwave devices; Power dissipation; Predictive models; Process design;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.146321

Filename

146321