• DocumentCode
    995560
  • Title

    Modeling of plasma-etch processes using well stirred reactor approximations and including complex gas-phase and surface reactions

  • Author

    Meeks, Ellen ; Won Shon, Jong

  • Author_Institution
    Sandia Nat. Labs., Livermore, CA, USA
  • Volume
    23
  • Issue
    4
  • fYear
    1995
  • fDate
    8/1/1995 12:00:00 AM
  • Firstpage
    539
  • Lastpage
    549
  • Abstract
    A 0-D or well stirred reactor model determines spatially and time-averaged species composition in plasma-etch reactors, through solution of species, mass, and electron-energy balance equations. The use of well stirred reactor approximations reduces the computational expense of detailed kinetics calculations and allows investigation of the dependence of plasma chemistry on etch-process parameters. The reactor is characterized by a chamber volume, surface area, net mass flow or residence time, pressure, energy loss to surroundings, power deposition, and inlet-gas composition. The electron-energy equation includes a detailed power balance with losses to ions and electrons through the sheath, as well as inelastic and elastic collision losses. The model employs reaction-rate coefficients for electron-impact reactions, which require an assumption of the electron energy distribution function (EEDF). We compare model results using Maxwellian EEDF´s, as well as reaction-rate coefficients determined as a function of average electron energy through solution of the Boltzmann equation, for chlorine chemistry. The Boltzmann rates are determined by time-lagging the equilibration of electrons with applied electric fields. The Maxwellian reaction rates give higher ionization fractions than the Boltzmann rates, affecting the predicted electronegativity and positive ion composition for chlorine plasmas. The model also shows a strong sensitivity of the plasma composition to the assumed surface-recombination probability of atomic chlorine
  • Keywords
    chemical reactions; molecule-electron collisions; plasma applications; plasma collision processes; reaction rate constants; sputter etching; Boltzmann equation; Cl chemistry; Maxwellian reaction rates; elastic collision losses; electron energy distribution function; electron-energy balance equations; electron-energy equation; electron-impact reactions; electronegativity; gas-phase reactions; inelastic collision losses; modeling; plasma chemistry; plasma-etch processes; plasma-etch reactors; positive ion composition; reaction-rate coefficients; spatially species composition; stirred reactor approximations; surface reactions; surface-recombination probability; time-averaged species composition; Boltzmann equation; Distribution functions; Electrons; Energy loss; Etching; Inductors; Kinetic theory; Maxwell equations; Plasma applications; Plasma chemistry;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/27.467973
  • Filename
    467973