• DocumentCode
    995869
  • Title

    Single Event Upsets Induced by 1–10 MeV Neutrons in Static-RAMs Using Mono-Energetic Neutron Sources

  • Author

    Baggio, J. ; Lambert, D. ; Ferlet-Cavrois, V. ; Paillet, P. ; Marcandella, C. ; Duhamel, O.

  • Author_Institution
    CEA/DIF, Bruyeres-le-Chatel
  • Volume
    54
  • Issue
    6
  • fYear
    2007
  • Firstpage
    2149
  • Lastpage
    2155
  • Abstract
    The neutron-induced SEU sensitivity in the 1-10 MeV energy range is investigated using monoenergetic neutron beams at 2.5, 4, 6, and 14 MeV. Below the 0.25 mum technology node, bulk technologies exhibit a relatively high sensitivity to neutrons between 4 and 6 MeV which is explained by the contribution of alpha particles coming from (n, alpha) reactions. In the terrestrial environment, the contribution to SER of neutrons in this energy range exceeds 10%.
  • Keywords
    SRAM chips; neutron effects; (n,alpha) reactions; alpha particles; electron volt energy 1 MeV to 10 MeV; electron volt energy 14 MeV; monoenergetic neutron beams; single event upsets; static-RAMs; terrestrial environment; Aerospace electronics; Alpha particles; Boron; Cosmic rays; Neutrons; Nuclear electronics; Particle beams; Protons; Random access memory; Single event upset; Neutron; SEU; SOI; SRAM;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2007.910039
  • Filename
    4394996
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=995869