Soft Error Trends and New Physical Model for Ionizing Dose Effects in Double Gate Z-RAM Cell

We model the soft error trends and total ionizing dose (TID) effects in floating body capacitorless DRAM (Z-RAM) cell. We find that soft error rates (SER) in Z-RAM scales strongly with cell body thickness. We propose a new physical model for TID effects in thin (les 10 nm) oxides. This model is based on injection of hot carriers into the oxide which are generated by particle strikes and is relevant for thin oxides in any MOS device. We utilize hydrodynamic approach and Monte Carlo method to implement our model. The primary radiation interaction is simulated by using Geant4-a toolkit for the simulation of particle interaction and transport through matter. The preliminary results of our model match well with radiation-induced leakage current (RILC) vs. dose data.