DocumentCode
996130
Title
Fabrication of submicrometre resist patterns using an edge-defined technique
Author
Takasu, Y. ; Todokoro, Y.
Author_Institution
Matsushita Electronics Corporation, Semiconductor R&D Center, Nagaokakyo, Japan
Volume
20
Issue
24
fYear
1984
Firstpage
1013
Lastpage
1014
Abstract
An edge-defined technique for the fabrication of submicrometre resist patterns is described. The technique consists of resist pattern fabrication, deep UV hardening, plasma deposition, spin coating of resist, developing back, and wet etch. A 100 nm line in 1.2 ¿m-thick resist layer is obtained with essentially vertical walls.
Keywords
etching; photoresists; plasma deposition; deep UV hardening; edge-defined technique; plasma deposition; resist pattern fabrication; spin coating; submicrometre resist patterns; wet etch;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840689
Filename
4249203
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