• DocumentCode
    996130
  • Title

    Fabrication of submicrometre resist patterns using an edge-defined technique

  • Author

    Takasu, Y. ; Todokoro, Y.

  • Author_Institution
    Matsushita Electronics Corporation, Semiconductor R&D Center, Nagaokakyo, Japan
  • Volume
    20
  • Issue
    24
  • fYear
    1984
  • Firstpage
    1013
  • Lastpage
    1014
  • Abstract
    An edge-defined technique for the fabrication of submicrometre resist patterns is described. The technique consists of resist pattern fabrication, deep UV hardening, plasma deposition, spin coating of resist, developing back, and wet etch. A 100 nm line in 1.2 ¿m-thick resist layer is obtained with essentially vertical walls.
  • Keywords
    etching; photoresists; plasma deposition; deep UV hardening; edge-defined technique; plasma deposition; resist pattern fabrication; spin coating; submicrometre resist patterns; wet etch;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840689
  • Filename
    4249203