Design and analysis of a 70-ps SiGe differential RF switch

Author

Hancock, Timothy M. ; Rebeiz, Gabriel M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

Volume

53

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

2403

Lastpage

2410

Abstract

This paper presents the design and analysis of an SiGe high isolation single-pole double-throw (SPDT) differential absorptive switch at 24 GHz for pulsed ultra-wideband applications. Sub-100-ps envelope rise times are achieved through the use of differential current steering. The SPDT results in 1.9 dB of gain in the passband and an isolation of 35 dB while remaining matched at its ports (absorptive). The measured rise time of the RF envelope is 70 ps using a transistor with an f_T of 80 GHz and agrees with both the simulated and analytically determined values.

Keywords

Ge-Si alloys; emitter-coupled logic; microwave switches; millimetre wave transistors; ultra wideband technology; 1.9 dB; 24 GHz; 35 dB; 70 ps; 80 GHz; SPDT; SiGe; UWB; current mode logic; differential RF switch; differential current steering; emitter coupled logic; single-pole double-throw; switching speed; transistor; ultra-wideband; Communication switching; FETs; Germanium silicon alloys; Laboratories; P-i-n diodes; Pulse modulation; Radio frequency; Silicon germanium; Switches; Ultra wideband technology; Current mode logic (CML); RF switches; emitter coupled logic (ECL); rise time; silicon–germanium (SiGe); switching speed; ultra-wideband (UWB);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2005.850427

Filename

1463363