A novel 60-GHz monolithic star mixer using gate-drain-connected pHEMT diodes

Author

Yeom, Kyung-Whan ; Ko, Du-Hyun

Author_Institution

Dept. of Radio Sci. & Eng., Chungnam Nat. Univ., Daejeon, South Korea

Volume

53

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

2435

Lastpage

2440

Abstract

In this paper, a novel 60-GHz monolithic star mixer using the gate-drain-connected pseudomorphic high electron-mobility transistor (pHEMT) diodes instead of conventional drain-source-connected diodes is proposed. The mixer is fabricated using 0.1-μm GaAs pHEMT process. The measurements show the conversion loss of 13-18 dB over the full V-band (50-75 GHz), local oscillator to RF isolation of approximately 35 dB, and the input 1-dB compression of approximately 3 dBm.

Keywords

III-V semiconductors; MMIC mixers; gallium arsenide; high electron mobility transistors; microwave diodes; 60 GHz; GaAs; RF isolation; conversion loss; gate-drain connected pHEMT diodes; local oscillator isolation; monolithic microwave integrated circuit; monolithic star mixer; Coplanar waveguides; FETs; Frequency; Gallium arsenide; Heterojunctions; Impedance matching; Local oscillators; MMICs; PHEMTs; Schottky diodes; Doubly balanced mixer (DBM); GaAs pseudomorphic high electron-mobility transistor (pHEMT); monolithic microwave integrated circuit (MMIC); star mixer;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2005.850402

Filename

1463368