Al/sub 0.10/Ga/sub 0.90/As-GaAs microcoolers

Author

Jizhi Zhang ; Anderson, N.G. ; Kei May Lau

Author_Institution

Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amberst, MA, USA

Volume

25

Issue

6

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

345

Lastpage

347

Abstract

GaAs-based microcoolers were fabricated and tested. An Al/sub 0.10/Ga/sub 0.90/As layer grown on GaAs, having a lower thermal conductivity and comparable electrical conductivity to that of the substrate, was employed in the microcooler structure to reduce the heat conduction back from the heat sink. Maximum cooling temperatures of 0.87 /spl deg/C and 2.3 /spl deg/C were obtained at ambient temperatures of 25 /spl deg/C and 100 /spl deg/C, respectively, from 60 × 60 μm microcoolers.

Keywords

III-V semiconductors; aluminium compounds; cooling; electrical conductivity; heat conduction; micromechanical devices; thermal conductivity; thermal management (packaging); thermionic electron emission; thermoelectric devices; 0.87 C; 100 C; 2.3 C; 25 C; 60 micron; AlGaAs-GaAs; electrical conductivity; film cooler; heat conduction; heat sink; in situ cooling; maximum cooling temperatures; microcoolers; substrate; thermal conductivity; thermionic; thermoelectric; Aluminum; Electronics cooling; Gallium arsenide; Heat sinks; Laser stability; Resistance heating; Semiconductor lasers; Semiconductor superlattices; Thermal conductivity; Thermoelectricity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.828568

Filename

1302221