DocumentCode
996881
Title
20 GHz bandwidth 1.5 mu m wavelength VUG DFB laser using a zero net strain InxGa1-xAsyP1-y well active structure grown at constant y
Author
Kazmierski, C. ; Ougazzaden, A. ; Robein, D. ; Mathoorasing, D. ; Blez, M. ; Mircea, A.
Author_Institution
France Telecom, CNET, Bagneux, France
Volume
29
Issue
14
fYear
1993
fDate
7/8/1993 12:00:00 AM
Firstpage
1290
Lastpage
1291
Abstract
A 20 GHz bandwidth VUG (V-on-U groove) DFB GaInAsP laser based on a zero net strain quaternary quantum well active structure grown at a constant phosphorus/arsenic ratio is described. The active structure is designed such that emission wavelength has excellent thermal stability in order to avoid gain peak shifts during two epitaxial regrowths. Using this active material, the authors show that high-performance high-speed DFB devices can be designed and fabricated.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical communication equipment; semiconductor lasers; 1.5 micron; 20 GHz; DFB laser; GaInAsP; MQW laser; V-on-U groove; emission wavelength; epitaxial regrowths; high-performance; high-speed DFB devices; quaternary quantum well active structure; thermal stability; zero net strain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930861
Filename
252438
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