Proposal for an ultra-compact electron transfer modulator structure

Author

Wang, Jiacheng ; Leburton, J.P. ; Zucker, J.E.

Author_Institution

Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana Champaign, IL, USA

Volume

29

Issue

14

fYear

1993

fDate

7/8/1993 12:00:00 AM

Firstpage

1293

Lastpage

1295

Abstract

A theoretical model is presented for the current-voltage characteristics of an InGaAs-InAlAs multiquantum-well optical modulator with tunable charge density. The current-voltage characteristics are derived from a drift-diffusion and thermionic emission current model within a selfconsistent Poisson-Schrodinger scheme and show good agreement with experiment. A short-period structure with small leakage current and high breakdown voltage is proposed.

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical modulation; optical waveguides; semiconductor device models; semiconductor quantum wells; BRAQWET; InGaAs-InAlAs; breakdown voltage; current-voltage characteristics; drift diffusion model; electron transfer modulator; leakage current; multiquantum-well; optical modulator; selfconsistent Poisson-Schrodinger scheme; short-period structure; theoretical model; thermionic emission current model; tunable charge density; ultracompact design;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19930863

Filename

252440