DocumentCode
996903
Title
Concentration dependence of magnetic and transport properties of amorphous Gd-Ge alloys
Author
Gambino, Richard J. ; McGuire, Thomas R.
Author_Institution
IBM T. J. Watson Research Center, Yorktown Heights, NY
Volume
19
Issue
5
fYear
1983
fDate
9/1/1983 12:00:00 AM
Firstpage
1952
Lastpage
1954
Abstract
The properties of Gd100-x Gex amorphous alloys show an unusual dependence on composition. At x = 50% the saturation magnetization and Curie temperature decrease precipitously. The resistivity and spontaneous Hall effect also have complex behavior in the same composition region. There is a maximum in ρ at 43% Ge superimposed on a more monotonic increase with increasing x. Also at x = 43% there is a pronounced maximum in the tangent of the Hall angle, ρH /ρ. In addition to the peak at 43%, the resistivity also increases steeply above 75% Ge extrapolating toward values found for semiconducting, amorphous germanium. The Hall conductivity (ρH /ρ2), on the other hand, decreases monotonically with increasing x over the entire composition range, x = 20 to 82%. In general, the spontaneous Hall effect in this metal-semiconductor system can be understood in terms of the Berger "side jump" model.
Keywords
Amorphous magnetic materials/devices; Hall effect; Amorphous magnetic materials; Amorphous materials; Atomic measurements; Conductivity; Copper alloys; Germanium alloys; Hall effect; Magnetic properties; Magnetic semiconductors; Saturation magnetization;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1983.1062623
Filename
1062623
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