• DocumentCode
    996966
  • Title

    Electron traps in bulk and epitaxial GaAs crystals

  • Author

    Martin, G.M. ; Mitonneau, A. ; Mircea, A.

  • Author_Institution
    Laboratoires d´Electronique et de Physique Appliquée (LEP), Limeil Brévannes, France
  • Volume
    13
  • Issue
    7
  • fYear
    1977
  • Firstpage
    191
  • Lastpage
    193
  • Abstract
    Fifteen different electron traps have been characterised in v.p.e., l.p.e., m.b.e. and bulk-grown GaAs from d.l.t.s. experiments. An accurate description of each level is given, and allows a fruitful comparison with fragmentary previous data. A catalogue of these electron traps is provided as a working tool.
  • Keywords
    III-V semiconductors; electron traps; gallium arsenide; semiconductor epitaxial layers; LPE GaAs; MBE GaAs; VPE GaAs; bulk GaAs; deep level transient spectroscopy; electron traps; epitaxial GaAs crystals;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770140
  • Filename
    4249286
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=996966