• DocumentCode
    997006
  • Title

    High transmittance TFT-LCD panels using low-κ CVD films

  • Author

    Hong, Wan-Shick ; Jung, Kwan-Wook ; Choi, Joon-Hoo ; Hwang, Byung-Keun ; Chung, Kyuha

  • Author_Institution
    Dept. of Electron. Eng., Sejong Univ., South Korea
  • Volume
    25
  • Issue
    6
  • fYear
    2004
  • fDate
    6/1/2004 12:00:00 AM
  • Firstpage
    381
  • Lastpage
    383
  • Abstract
    Thin-film transistor liquid crystal display (TFT-LCD) panels of a high transmittance structure were fabricated by using a low-κ dielectric film as a passivation layer. The low-dielectric films were successfully deposited and patterned using a conventional plasma-enhanced chemical vapor deposition (PECVD) and plasma-assisted etching techniques. The interface between the a-Si channel and the overlaying passivation was modified by appropriate plasma treatment prior to the low-κ deposition. TFTs having the a-Si:C:O:H passivation showed a transfer characteristics similar to that of conventional TFTs. The high transmittance panel showed brightness approximately 30% higher than that of a standard panel without degrading other display characteristics, such as crosstalk.
  • Keywords
    amorphous semiconductors; dielectric thin films; liquid crystal displays; passivation; plasma CVD; sputter etching; thin film transistors; a-Si channel; a-Si:C:O:H passivation; aperture ratio; crosstalk; dielectric constant; display characteristics; high transmittance TFT-LCD panels; low-κ CVD films; low-κ deposition; low-κ dielectric film; overlaying passivation; passivation layer; plasma treatment; plasma-assisted etching techniques; plasma-enhanced chemical vapor deposition; thin-film transistor liquid crystal display; Chemical vapor deposition; Dielectric films; Etching; Liquid crystal displays; Passivation; Plasma applications; Plasma chemistry; Plasma displays; Plasma properties; Thin film transistors; Aperture ratio; TFT-LCD; dielectric constant; passivation;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2004.828957
  • Filename
    1302233