Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier

Author

He, Qiurong ; Feng, Milton

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA

Volume

39

Issue

6

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

956

Lastpage

959

Abstract

We present the design of two wide-band, low-power and low-noise amplifiers (LNAs) using SiGe BiCMOS technology. The distributed LNA demonstrated 0.1-23-GHz bandwidth and 14.5-dB gain with less than ±1-dB gain flatness. It exhibited 5-dB noise figure and 14.8-dBm output IP3, and dissipated 54-mW dc power. Comparable circuit performance was also obtained in the lumped LNA while utilizing only one-fifth the chip area of the distributed LNA.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; distributed amplifiers; integrated circuit design; low-power electronics; radiofrequency amplifiers; semiconductor materials; wideband amplifiers; LNAs; SiGe; SiGe BiCMOS technology; bandwidth; chip area; gain; gain flatness; high-gain; high-linearity SiGe BiCMOS wide-band low-noise amplifier; low-power; Bandwidth; BiCMOS integrated circuits; Circuit optimization; Distributed amplifiers; Distributed parameter circuits; Germanium silicon alloys; Linearity; Low-noise amplifiers; Noise figure; Silicon germanium; BiCMOS; LNAs; SiGe; broadband amplifiers; distributed amplifiers; linearity; low-noise amplifiers; noise figure;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2004.827801

Filename

1302273