Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part I: Device Model

Author

Bryant, Angus T. ; Lu, Liqing ; Santi, Enrico ; Palmer, Patrick R. ; Hudgins, Jerry L.

Author_Institution

Univ. of Warwick, Coventry

Volume

23

Issue

1

fYear

2008

Firstpage

189

Lastpage

197

Abstract

This paper presents the development and implementation of a physics-based diode model which can simulate aspects of high-voltage diodes such as snappy recovery during punch-through and the modified carrier density profile due to local lifetime control. It uses a Fourier series solution for the ambipolar diffusion equation in the lightly doped base region. The model is compared with finite-element device simulations. A parameter extraction procedure for the diode with lifetime control is proposed in Part II.

Keywords

Fourier series; carrier lifetime; finite element analysis; p-i-n diodes; semiconductor device models; Fourier series; ambipolar diffusion equation; carrier lifetime zoning; finite-element device simulations; p-i-n diodes; physics-based diode model; punch-through; snappy recovery; Charge carrier density; Charge carrier lifetime; Circuit simulation; Equations; P-i-n diodes; Parameter extraction; Predictive models; Semiconductor diodes; Switching loss; Voltage; Lifetime control; p-i-n diode model; physics-based model; power semiconductor modeling; variable lifetime;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2007.911823

Filename

4395158