• DocumentCode
    997688
  • Title

    Double epitaxial silicon avalanche photodiodes for optical-fibre communications

  • Author

    Nishida, Katsuhiko ; Ishii, Kazuhiro ; Minemura, Kouichi ; Taguchi, Kenko

  • Author_Institution
    Nippon Electric Co. Ltd., Central Research Laboratories and Laser Equipment Development Division, Kawasaki, Japan
  • Volume
    13
  • Issue
    10
  • fYear
    1977
  • Firstpage
    280
  • Lastpage
    281
  • Abstract
    A new type of planar silicon avalanche photodiodes have been fabricated with a high-low impurity profile with a wide avalanche region by double epitaxy. The a.p.d. characteristics of low noise, high speed, high quantum efficiency and relatively low operating voltage make them particularly suitable for optical-fibre communication systems.
  • Keywords
    avalanche diodes; optical communication equipment; photodiodes; double epitaxial Si avalanche photodiodes; optical fibre communications;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770206
  • Filename
    4249355
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=997688