DocumentCode
997942
Title
Intentional side etching to achieve low-noise GaAs f.e.t.
Author
Murai, Fumio ; Kurono, Hirokazu ; Kodera, Hiroshi
Author_Institution
Hitachi Ltd., Central Research Laboratory, Kokubunji, Japan
Volume
13
Issue
11
fYear
1977
Firstpage
316
Lastpage
318
Abstract
A very-low-noise 0.5 ¿m-gate GaAs f.e.t. is realised by using intentional side etching of an Au/Ti double layer as the Schottky-gate metal. At 12 GHz, the minimum noise figure is 2.1 dB, with 7.6 dB associated gain at a bias of VD = 4 V, ID= 10 mA. Maximum stable gain is 14 dB at VD = 4 V, ID = 30 mA.
Keywords
Schottky gate field effect transistors; electron device noise; gallium arsenide; semiconductor technology; solid-state microwave devices; 0.5 micron gate; 2.1 dB noise figure at 12 GHz; Au/Ti double layer; GaAs FETs; Schottky gate FETs; X-band FET; fabrication; intentional side etching; low noise FETs; submicron gates;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19770231
Filename
4249381
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