• DocumentCode
    999360
  • Title

    Temperature dependence of multiplication noise in silicon avalanche photodiodes

  • Author

    Kanbe, H.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    14
  • Issue
    17
  • fYear
    1978
  • Firstpage
    539
  • Lastpage
    541
  • Abstract
    The temperature dependence of multiplication noise in silicon avalanche photodiodes with a low-high-low impurity density profile is calculated. The variation of multiplication noise by temperature change can be neglected in practical use at a constant multiplication factor, which is in agreement with experimental results.
  • Keywords
    avalanche photodiodes; electron device noise; silicon; Si avalanche photodiodes; breakdown voltage; impact ionisation coefficients; low high low impurity density profile; multiplication noise; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780366
  • Filename
    4249528
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=999360