• DocumentCode
    999683
  • Title

    C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon

  • Author

    Izumi, K. ; Doken, M. ; Ariyoshi, H.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    14
  • Issue
    18
  • fYear
    1978
  • Firstpage
    593
  • Lastpage
    594
  • Abstract
    Buried SiO2, layers were formed by oxygen-ion (14O+) implantation into silicon. The impurity distribution of the oxygen-implanted silicon substrate was analysed by auger spectroscopy. The epitaxially-grown silicon layer on this substrate showed a good monocrystalline structure, and a 19-stage c.m.o.s. ring oscillator exhibited high performance in operation.
  • Keywords
    field effect integrated circuits; ion implantation; auger spectroscopy; impurity distribution; ring oscillator;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780397
  • Filename
    4249560
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=999683