Title of article
Sb/Si(1 1 0) 2×3—a photoelectron diffraction study
Author/Authors
M. Schürmann، نويسنده , , S. Dreiner، نويسنده , , U. Berges and C. Westphal، نويسنده , , C. Westphal، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
131
To page
134
Abstract
The Sb/Si(1 1 0) 2×3 surface has been investigated by means of X-ray photoelectron diffraction (XPD). Low kinetic energies of the photoelectrons have been chosen to increase the surface sensitivity of the method. Simulation calculations have been carried out in order to test previously proposed structure models. The simulated diffraction patterns were compared with the experimental results by means of a R-factor analysis. The comparison indicates that at least part of the Sb atoms adsorbed on the surface form Sb trimers.
Keywords
Silicon , Photoelectron diffraction , Surface structure , Sb/Si(1 1 0) 2×3
Journal title
Applied Surface Science
Serial Year
2003
Journal title
Applied Surface Science
Record number
1000003
Link To Document