Si epitaxial growth on SiH3CH3 reacted Ge(1 0 0) and intermixing between Si and Ge during heat treatment

Epitaxial growth of Si on SiH3CH3 reacted Ge(1 0 0) using ultraclean hot-wall low-pressure chemical vapor deposition (LPCVD), and the intermixing between Si and Ge during heat treatment has been investigated. By SiH3CH3 reaction at 450 °C, Si and C atomic layers are self-limitedly formed on Ge(1 0 0), and the number of C atoms decreases with increasing heat treatment temperature in the range of 500–700 °C. After such treatment, Si epitaxial growth on the 6×1013 cm−2 C existing Ge(1 0 0) is achieved at 500 °C. To clarify the interface abruptness, dependence of Ge3d intensity on the depth are obtained by repetition of X-ray photoelectron spectroscopy (XPS) measurements and wet etching. It is found that the intermixing between Si and Ge during Si epitaxial growth and heat treatment after its growth is suppressed by the existence of C atoms at the heterointerface.