Title of article
Auto-correlation function analysis of crystallization in amorphous SiGe thin films
Author/Authors
T.F. Chiang، نويسنده , , W.W. Wu، نويسنده , , S.L. Cheng، نويسنده , , H.H. Lin، نويسنده , , S.W. Lee، نويسنده , , C.J. Tay and L.J. Chen، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
5
From page
339
To page
343
Abstract
The existence of medium-range ordering structures or nanocrystallites in as-deposited amorphous SiGe thin films has been demonstrated by high-resolution transmission electron microscopy in conjunction with auto-correlation function analysis. The density of nanocrystallites decreases in amorphous SiGe samples annealed at 300–350 °C then increases in samples annealed at 400–450 °C with annealing temperature. The observations can be interpreted in terms of free energy change with annealing temperature.
Keywords
Auto-correlation function , Amorphous , Si , SiGe , Crystallization
Journal title
Applied Surface Science
Serial Year
2003
Journal title
Applied Surface Science
Record number
1000040
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