• Title of article

    Changes in the electronic structure of DiMePTCDI films on S-GaAs(1 0 0) upon exposure to oxygen

  • Author/Authors

    Gianina Gavrila*، نويسنده , , Henry Me´ndez، نويسنده , , Thorsten U. Kampen، نويسنده , , Dietrich R.T. Zahn *، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    5
  • From page
    126
  • To page
    130
  • Abstract
    The electronic properties of N,N0-dimethyl-3,4,9,10-perylene tetracarboxylic diimide (DiMePTCDI) films deposited on S-GaAs(1 0 0) surfaces are studied by ultraviolet photoelectron spectroscopy (UPS). The energy position of the highest occupied molecular orbital (HOMO) of clean DiMePTCDI films is found to be at 2.04 0.10 eV with respect to Fermi level. Exposure to oxygen results in a shift of the HOMO from its original position by 0.25 0.10 eV towards the middle of the band gap. The shift explains the dramatic decrease of the current in the current–voltage (I–V) characteristics upon oxygen exposure of Ag/DiMePTCDI/S-GaAs(1 0 0) Schottky diodes. # 2004 Elsevier B.V. All rights reserved.
  • Keywords
    Schottky contacts modification , organic materials , Energy level alignment
  • Journal title
    Applied Surface Science
  • Serial Year
    2004
  • Journal title
    Applied Surface Science
  • Record number

    1000101

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=1000101