High-resolution photoemission study of the Si(111)/Au interface and its modification by a GaSe van der Waals termination layer

The GaSe half-sheet termination layer provides an epitaxial and chemical stable electronic passivation of the Si(111) surface. Gold was deposited on nþ- and p-doped Si(111):GaSe half-sheet terminated surfaces and the evolution of the Si(111):GaSe/Au interface and the Schottky barrier formation have been investigated. The GaSe half-sheet van der Waals surface termination on the Si(111) substrate do not modify the Si/Au Schottky barrier height but almost completely suppresses the Si/Au interface reaction at gold coverages <5 mL. The substrate chemical and electronic properties were investigated in-situ by high-resolution synchrotron excited X-ray photoelectron spectroscopy (SXPS). # 2004 Elsevier B.V. All rights reserved