Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(1 0 0) interfacial transition layer

The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity at La2O3/Si(1 0 0) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra. # 2004 Elsevier B.V. All rights reserved.