Title of article
Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(1 0 0) interfacial transition layer
Author/Authors
H. Nohira، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
4
From page
493
To page
496
Abstract
The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved
photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity
at La2O3/Si(1 0 0) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra.
# 2004 Elsevier B.V. All rights reserved.
Keywords
Rutherford back scattering , Angle-resolved photoelectron spectroscopy , High-k dielectrics , Electronic bandstructure , Depth profiling , La2O3
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
1000160
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