Title of article :
Removal of copper and nickel contaminants from
Si surface by use of cyanide solutions
Author/Authors :
N. Fujiwara، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
The cleaning method using cyanide solutions has been developed to remove heavy metals such as copper (Cu) and nickel (Ni)
from Si surfaces. Immersion of Si wafers with both Cu and Ni contaminants in potassium cyanide (KCN) solutions of methanol
at room temperature decreases these surface concentrations below the detection limit of total reflection X-ray fluorescence
spectroscopy of 3 109 atoms/cm2. UV spectra of the KCN solutions after cleaning of the Cu-contaminated Si surface show
that stable copper-cyanide complexes are formed in the solution, leading to the prevention of the re-adsorption of copper in the
solutions. From the complex stability constants, it is concluded that the CuðCNÞ4
3 is the most dominant species in the KCN
solutions.
Keywords :
Cleaning , copper , Silicon , Cyanide solutions , Defect passivation
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science