Title of article
Atomically engineered interfaces for spin injection: ultrathin epitaxial Fe films grown on As- an
Author/Authors
Herfort، نويسنده , , W. Braun، نويسنده , , A. Trampert، نويسنده , , H.-P. Scho¨nherr، نويسنده , , K.H. Ploog، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
8
From page
181
To page
188
Abstract
We compare ultrathin Fe films grown epitaxially at 50 8C on GaAs(0 0 1) substrates having different surface reconstructions
in a film thickness range of 2.5–140 monolayers (ML). The surface reconstruction-dependent nucleation of the Fe films was
characterized by azimuthal reflection high-energy electron diffraction (RHEED) scans. The Fe/GaAs interface is more abrupt for
Fe growth on As-terminated GaAs(0 0 1) templates than on Ga-terminated ones. Our studies of the magnetic properties of the Fe
films show that the strong uniaxial anisotropy with the easy axis of magnetization along [1 1 0] is not directly related to the
specific GaAs(0 0 1) surface reconstruction. The onset of ferromagnetism in our Fe films starts at 3.5 ML at room temperature.
This is only slightly larger than that for Fe films grown on metallic single crystal substrates. The saturation magnetization for Fe
films above 4 ML thickness is very close to the bulk value of Fe indicating the absence of interfacial Fe–Ga–As compounds. Fe
films with smaller thickness show a reduced magnetic moment which we ascribe to the unfinished coalescence process of Fe
islands at the initial stage of growth in agreement with RHEED results
Keywords
Molecular Beam Epitaxy , Reflection high-energy electron diffraction , Magneticanisotropy , Ferromagnet/semiconductor hybrid structures
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
1000313
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