• Title of article

    Atomically engineered interfaces for spin injection: ultrathin epitaxial Fe films grown on As- an

  • Author/Authors

    Herfort، نويسنده , , W. Braun، نويسنده , , A. Trampert، نويسنده , , H.-P. Scho¨nherr، نويسنده , , K.H. Ploog، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    8
  • From page
    181
  • To page
    188
  • Abstract
    We compare ultrathin Fe films grown epitaxially at 50 8C on GaAs(0 0 1) substrates having different surface reconstructions in a film thickness range of 2.5–140 monolayers (ML). The surface reconstruction-dependent nucleation of the Fe films was characterized by azimuthal reflection high-energy electron diffraction (RHEED) scans. The Fe/GaAs interface is more abrupt for Fe growth on As-terminated GaAs(0 0 1) templates than on Ga-terminated ones. Our studies of the magnetic properties of the Fe films show that the strong uniaxial anisotropy with the easy axis of magnetization along [1 1 0] is not directly related to the specific GaAs(0 0 1) surface reconstruction. The onset of ferromagnetism in our Fe films starts at 3.5 ML at room temperature. This is only slightly larger than that for Fe films grown on metallic single crystal substrates. The saturation magnetization for Fe films above 4 ML thickness is very close to the bulk value of Fe indicating the absence of interfacial Fe–Ga–As compounds. Fe films with smaller thickness show a reduced magnetic moment which we ascribe to the unfinished coalescence process of Fe islands at the initial stage of growth in agreement with RHEED results
  • Keywords
    Molecular Beam Epitaxy , Reflection high-energy electron diffraction , Magneticanisotropy , Ferromagnet/semiconductor hybrid structures
  • Journal title
    Applied Surface Science
  • Serial Year
    2004
  • Journal title
    Applied Surface Science
  • Record number

    1000313