Interface properties in ZnSe/ZnS based strained superlattices and quantum wells

In this work, the excitonic properties of ZnSe/ZnSxSe1 x strained superlattices (SLs) and quantum wells (QWs) are studied taking into account spin-orbit splitting, strain, and interfacial effects. The broadening of excitonic related photoluminescence (PL) spectra due to the existence of gradual interfaces with thickness of 10 A° is shown to be of the order of 30 meV for a 30 A° ZnSe/ZnS0.18Se0.82 QW.