Title of article :
Initial adsorption and C-incorporation of organosilanes at
Si(0 0 1) investigated by temperature-programmed desorption
Author/Authors :
K. Senthil، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
Temperature-programmed desorption (TPD) has been used to study the initial adsorption and C-incorporation of
organosilanes [monomethylsilane (MMS), dimethylsilane (DMS) and trimethylsilane (TMS)] at Si(0 0 1) surfaces. Hydrogen
was the only desorbing species observed in the TPD spectra from organosilanes. Organosilane molecules adsorb dissociatively
on the Si(0 0 1) surfaces at room temperature. TPD spectra from DMS- and TMS-adsorbed Si surfaces present carbon-related
hydrogen (H2) desorption peaks from the initial adsorption. The carbon-incorporation ratio was found to be larger in the order of
TMS > DMS > MMS, with the sticking probability of molecules being almost identical for the three organosilane molecules.
Keywords :
Carbon incorporation , Organosilanes , thermal desorption , Si(0 0 1) surface
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science